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| Previous Datasheet Index Next Data Sheet PD - 9.784A IRGB420U INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) 3.0V @VGE = 15V, I C = 7.5A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 500 14 7.5 28 28 20 5.0 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.50 -- 2.0 (0.07) Max. 2.1 -- 80 -- Units C/W g (oz) Revision 0 C-575 To Order Previous Datasheet Index Next Data Sheet IRGB420U Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES /TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 500 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.47 -- V/C VGE = 0V, I C = 1.0mA -- 2.4 3.0 IC = 7.5A V GE = 15V -- 3.1 -- V IC = 14A See Fig. 2, 5 -- 2.7 -- IC = 7.5A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -10 -- mV/C VCE = VGE, IC = 250A 1.2 2.0 -- S VCE = 100V, I C = 7.5A -- -- 250 A VGE = 0V, V CE = 500V -- -- 1000 VGE = 0V, V CE = 500V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 15 3.7 6.5 28 11 72 96 0.13 0.08 0.21 26 12 120 140 0.35 7.5 330 47 5.9 Max. Units Conditions 23 IC = 7.5A 5.6 nC VCC = 400V See Fig. 8 9.8 VGE = 15V -- TJ = 25C -- ns IC = 7.5A, V CC = 400V 110 VGE = 15V, R G = 50 140 Energy losses include "tail" -- -- mJ See Fig. 9, 10, 11, 14 0.28 -- TJ = 150C, -- ns IC = 7.5A, V CC = 400V -- VGE = 15V, R G = 50 -- Energy losses include "tail" -- mJ See Fig. 10, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 50, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-576 To Order Previous Datasheet Index Next Data Sheet IRGB420U 20 For both : Triangular w av e: 16 LO A D C U R RE NT (A ) D uty c y cle: 50% TJ = 125C T sink = 90 C G ate driv e as spe c ified P o w e r Diss ipa tio n = 1 4W S quare w ave: 60% of rated voltage C lam p voltage: 80% of rated 12 8 4 Ideal diodes 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 100 100 I C , C ollector-to-E mitter C urrent (A ) IC , C olle ctor-to-E m itte r C urren t (A ) 10 TJ = 2 5C TJ = 1 50 C T J = 1 5 0C 10 1 TJ = 2 5C 0 .1 1 1 V G E = 15 V 20 s P UL S E W ID TH 10 0.01 5 10 V C C = 1 0 0V 5 s P U LS E W IDTH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate-to-E m itte r V o lta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-577 To Order Previous Datasheet Index Next Data Sheet IRGB420U 15 V G E = 15 V 4.5 Ma xim um DC C ollector C urre nt (A ) V G E = 15 V 80 s P UL S E W ID TH I C = 1 5A V C E , C o llec to r-to-E m itter V oltage (V ) 4.0 12 3.5 9 3.0 6 2.5 I C = 7.5A 2.0 3 I C = 4.0 A 1.5 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature (C ) T C , C a s e Te m p e ra ture (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 T herm al Response (Z th JC ) 1 D = 0.50 0 .2 0 0 .10 0.0 5 PD M 0.1 0.0 2 0 .01 t SIN G LE P U LS E (TH ER M AL R E SP O N SE ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 1 t2 0.01 0.00001 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-578 To Order Previous Datasheet Index Next Data Sheet IRGB420U 700 V G E , Gate-to-E m itter V oltage (V ) 1 00 600 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 4 00 V I C = 7.5 A 16 C, C apacitance (pF) 500 Cies 400 12 Coes 300 8 200 Cres 100 4 0 1 10 0 0 4 8 12 16 V C E , C ollector-to-E m itter V oltage (V ) Q G , Total G ate C harge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0 .2 2 To tal S w itching L osses (mJ) 0 .2 1 To ta l S w itch in g Losses (m J) VC C VG E TC IC = 4 00 V = 15 V = 25 C = 7.5 A 10 R G = 50 V G E = 1 5V V C C = 40 0V 1 0 .2 0 I C = 15 A I C = 7.5 A 0.1 0 .1 9 I C = 4.0A 0 .1 8 0 .1 7 20 30 40 50 60 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G , G ate R es istance ( ) W TC , C ase Tem perature (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-579 To Order Previous Datasheet Index Next Data Sheet IRGB420U 1.0 0.8 I C , C ollec to r-to -E m itter C u rre nt (A ) Total S w itc hing Losses (m J) RG TC V CC VGE = 50 = 150 C = 4 00 V = 15 V 1000 VG E E 20 V G= T J = 12 5C 100 0.6 10 S A FE O P E RA TIN G A R E A 0.4 1 0.2 0.0 0 4 8 12 16 0.1 1 10 100 1000 I C , C o llector-to -E m itte r Current (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix A: Section D - page D-3 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12 C-580 To Order |
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